mar. 2002 ? ? ? measurement point of case temperature ? ? ? ? t 1 terminal t 2 terminal gate terminal 15 0.3 14 0.5 10 0.3 2.8 0.2 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 ??? e bcr3km outline drawing dimensions in mm to-220fn mitsubishi semiconductor ? triac ? bcr3km low power use insulated type, planar passivation type application control of heater such as electric rice cooker, electric pot i t (rms) .................................................................. 3a v drm ................................................................. 600v i fgt ! , i rgt ! , i rgt # ................... 15ma (10ma) ? 3 ul recognized: yellow card no.e80276(n) file no. e80271 ? 1. gate open. i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso symbol a a a 2 s w w v a c c g v 3 30 3.7 3 0.3 6 0.5 ?0 ~ +125 ?0 ~ +125 2.0 2000 symbol v v maximum ratings value corresponding to 1 cycle of half wave 60hz, surge on-state current v drm v dsm rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage parameter parameter voltage class unit ratings unit conditions commercial frequency, sine full wave 360 conduction, tc=111 c 60hz sinewave 1 full cycle, peak value, non-repetitive t a =25 c, ac 1 minute, t 1 ?t 2 ?g terminal to case repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 12 600 720 refer to the page 6 as to the product guaranteed maximum junction temperature 150 c
mar. 2002 ? ? ? ? ! ! # ! ! # ? ? ? ? ? ? ? ? ? ? 4.0 50 ! @ # ! @ # min. 0.2 ma v v v v ma ma ma v electrical characteristics mitsubishi semiconductor ? triac ? bcr3km low power use insulated type, planar passivation type performance curves refer to the page 6 as to the product guaranteed maximum junction temperature 150 1 t j = 25 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz)
mar. 2002 mitsubishi semiconductor ? triac ? bcr3km low power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 10 1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 0 2 10 1 357 2 10 2 357 2 10 3 357 i gm = 0.5a v gt i rgt i p gm = 3w p g(av) = 0.3w i fgt i , i rgt iii v gd = 0.2v 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 i rgt iii i fgt i , i rgt i 10 1 10 3 7 5 3 2 60 20 20 10 2 7 5 3 2 60 100 140 4 4 40 0 40 80 120 23 10 1 5710 0 23 5710 1 23 5710 2 4.0 4.5 5.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 23 10 2 5710 3 23 57 10 2 2 10 3 357 2 10 4 357 2 10 5 357 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 0 1.0 2.0 3.0 4.0 5.0 4.5 3.5 2.5 1.5 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 gate voltage (v) gate trigger current vs. junction temperature junction temperature ( gate trigger voltage vs. junction temperature junction temperature ( maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( maximum transient thermal impedance characteristics (junction to ambient) 360 maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) gate characteristics ( , ? and ?? ) gate current (ma)
mar. 2002 mitsubishi semiconductor ? triac ? bcr3km low power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 60 20 20 60 100 140 40 0 40 80 120 10 1 10 2 2 3 4 5 7 10 3 2 3 4 5 7 60 40 0 40 80 120 20 20 60 100 140 10 0 10 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 60 20 20 60 100 140 40 0 40 80 120 allowable case temperature vs. rms on-state current case temperature ( allowable ambient temperature vs. rms on-state current ambient temperature ( allowable ambient temperature vs. rms on-state current ambient temperature ( repetitive peak off-state current vs. junction temperature junction temperature ( holding current vs. junction temperature typical example t 2 + , g + t 2 , g typical example t 2 + , g typical example distribution laching current vs. junction temperature laching current (ma) junction temperature (
mar. 2002 mitsubishi semiconductor ? triac ? bcr3km low power use insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 40 60 20 0 20 60 80 140 100120 60 120 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 typical example typical example i quadrant iii quadrant t j = 125 breakover voltage vs. junction temperature junction temperature ( breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ gate trigger current vs. gate current pulse width gate current pulse width ( ? ? ? 1 3 2 gate trigger characteristics test circuits
mar. 2002 the product guaranteed maximum junction temperature 150 c (see warning.) measurement point of case temperature t 1 terminal t 2 terminal gate terminal 15 0.3 14 0.5 10 0.3 2.8 0.2 3.2 0.2 1.1 0.2 1.1 0.2 0.75 0.15 2.54 0.25 2.54 0.25 2.6 0.2 4.5 0.2 0.75 0.15 3 0.3 3.6 0.3 6.5 0.3 e bcr3km outline drawing dimensions in mm to-220fn mitsubishi semiconductor ? ? control of heater such as electric rice cooker, electric pot (warning) 1. refer to the recommended circuit values around the triac before using. 2. be sure to exchange the specification before using. if not exchanged, general triacs will be supplied. i t (rms) .................................................................. 3a v drm ................................................................. 600v i fgt ! , i rgt ! , i rgt # ................... 15ma (10ma) 3 ul recognized: yellow card no.e80276(n) file no. e80271 1. gate open. i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg v iso symbol a a a 2 s w w v a c c g v 3 30 3.7 3 0.3 6 0.5 ?0 ~ +150 ?0 ~ +150 2.0 2000 symbol v v maximum ratings value corresponding to 1 cycle of half wave 60hz, surge on-state current v drm v dsm rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight isolation voltage parameter parameter voltage class unit ratings unit conditions commercial frequency, sine full wave 360 conduction, tc=136 c 60hz sinewave 1 full cycle, peak value, non-repetitive t a =25 c, ac 1 minute, t 1 ?t 2 ?g terminal to case repetitive peak off-state voltage 1 non-repetitive peak off-state voltage 1 12 600 720
mar. 2002 mitsubishi semiconductor ? triac ? bcr3km low power use insulated type, planar passivation type ? ? ? ? ! ! # ! ! # ? ? ? ? ? ? ? ? ? ? 4.0 50 ! @ # ! @ # min. 0.2/0.1 ma v v v v ma ma ma v electrical characteristics performance curves the product guaranteed maximum junction temperature 150 0.5 1.5 2.5 3.5 1.0 2.0 3.0 4.0 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? t j = 25 c t j = 150 c 10 0 23 5710 1 23 5710 2 44 30 35 20 25 10 15 5 40 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz)
mar. 2002 mitsubishi semiconductor ? triac ? bcr3km low power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 i fgt i, i rgt i i rgt iii 60 20 20 60 100 160 140 40 0 40 80 120 10 1 10 3 7 5 3 2 10 2 7 5 3 2 4 4 10 1 10 3 7 5 3 2 10 2 7 5 4 4 3 2 60 20 20 60 100 160 140 40 0 40 80 120 10 0 23 10 0 5710 1 23 5710 2 23 5710 3 7 5 3 2 10 1 7 5 3 5 2 7 5 10 1 3 2 i gm = 0.5a v gt i rgt i p gm = 3w p g(av) = 0.3w i fgt i , i rgt iii v gd = 0.1v 23 10 1 5710 0 23 5710 1 23 5710 2 4.0 4.5 5.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 23 10 2 5710 3 23 57 10 2 2 10 3 357 2 10 4 357 2 10 5 357 10 0 10 1 2 3 4 5 7 10 2 2 3 4 5 7 0 1.0 2.0 3.0 4.0 5.0 4.5 3.5 2.5 1.5 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/w) conduction time (cycles at 60hz) transient thermal impedance ( c/w) conduction time (cycles at 60hz) gate characteristics ( , ? and ?? ) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c ) gate trigger current (t j = 25 c ) gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage (t j = t c ) gate trigger voltage (t j = 25 c ) maximum transient thermal impedance characteristics (junction to ambient) typical example typical example 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a)
mar. 2002 mitsubishi semiconductor ? triac ? bcr3km low power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 160 120 100 60 20 0 4.0 0 0.5 1.5 2.5 3.5 40 80 140 1.0 2.0 3.0 3.2 2.8 2.4 160 120 100 60 20 0 0 0.4 1.2 2.0 40 80 140 0.8 1.6 10 3 7 5 3 2 10 2 10 4 7 5 3 2 10 5 7 5 3 2 10 6 7 5 3 2 60 20 20 60 100 160 140 40 0 40 80 120 10 3 5 7 3 2 5 4 4 7 3 2 10 2 10 1 60 20 20 60 100 160 140 40 0 40 80 120 0 20 40 60 80 100 120 140 160 02468 1357 100 100 t2.3 120 120 t2.3 60 60 t2.3 10 3 7 5 3 2 7 5 3 2 7 5 3 2 10 2 10 1 10 0 60 20 20 60 100 160 140 40 0 40 80 120 allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) curves apply regardless of conduction angle 360 conduction resistive, inductive loads allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) all fins are black painted aluminum and greased curves apply regardless of conduction angle resistive, inductive loads natural convection allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) natural convection no fins, curves apply regardless of conduction angle resistive, inductive loads repetitive peak off-state current vs. junction temperature junction temperature ( c) 100 (%) repetitive peak off-state current (t j = t c ) repetitive peak off-state current (t j = 25 c ) typical example junction temperature ( c) 100 (%) holding current (t j = t c ) holding current (t j = 25 c ) holding current vs. junction temperature typical example t 2 + , g + t 2 , g typical example t 2 + , g typical example distribution laching current vs. junction temperature laching current (ma) junction temperature ( c)
mar. 2002 mitsubishi semiconductor ? triac ? bcr3km low power use insulated type, planar passivation type the product guaranteed maximum junction temperature 150 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt iii i rgt i i fgt i 160 100 80 40 20 0 140 60 120 ?0 ?0 20 60 100 160 140 ?0 0 40 80 120 23 10 1 5710 2 23 5710 3 23 5710 4 120 0 20 40 60 80 100 140 160 typical example typical example i quadrant iii quadrant typical example breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage (t j = t c ) breakover voltage (t j = 25 c ) breakover voltage vs. rate of rise of off-state voltage (t j = 125 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example i quadrant iii quadrant t j = 150 c breakover voltage vs. rate of rise of off-state voltage (t j = 150 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) gate trigger current vs. gate current pulse width gate current pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) c 1 c 1 = 0.1~0.47 f r 1 = 47~100 ? c 0 = 0.1 f r 0 = 100 ? c 0 r 0 r 1 6 ? 6 ? 6 ? 6v 6v 6v r g r g r g a v a v a v load recommended circuit values around the triac test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits
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